issue 2 - july 2007 1 www.zetex.com ? zetex semiconductors plc 2007 FCX1051A sot89 npn medium power transistor summary bv ceo > 40v i c(cont) = 3a v ce(sat) < 120mv @ 1a r ce(sat) = 57m p d = 2w complimentary type - fcx1151a description an npn low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the sot89 package. features ? very low saturation voltage ?high gain ? small outline package applications ? motor drive ?strobe flash ? mosfet and igbt gate driving ? dc -dc converters ordering information device mark 051 device reel size (inches) tape width (mm) quantity per reel FCX1051Ata 7 12 1,000 c e b c e pinout - top view c b
FCX1051A issue 2 - july 2007 2 www.zetex.com ? zetex semiconductors plc 2007 absolute maximum ratings notes: (a) measured under pulsed conditions. pulse width=300 s. duty cycle 2%. spice parameter data is available upon request for these devices. refer to the handling in structions for soldering surface mount components. (b) recommended p tot calculated using fr4 measuring 15x15x0.6mm. (c) maximum power dissipation is calcul ated assuming that the device is mounted on fr4 substrate measuring 40x40x0.6mm and using comparable measuremen t methods adopted by other suppliers. typical characteristics parameter symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5v peak pulse current (a) i cm 10 a continuous collector current i c 3a power dissipation at t amb = 25c p tot 1 (b) w 2 (c) w operating and storage temperature range t j ;t stg -55 to +150 c
FCX1051A issue 2 - july 2007 3 www.zetex.com ? zetex semiconductors plc 2007 electrical characteristics (@ t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo 150 v i c = 100a collector-emitter breakdown voltage v ces 150 v i c = 100a collector-emitter breakdown voltage v ceo 40 v i c = 10ma collector-emitter breakdown voltage v cev 150 v i c =100a, v eb = 1v emitter-base breakdown voltage v (br)ebo 5 v i e = 100a collector cut-off current i cbo 0.3 10 na v cb = 120v emitter cut-off current i ebo 0.3 10 na v eb = 4v collector emitter cut- off current i ces 0.3 10 na v ces = 120v collector-emitter saturation voltage v ce(sat) 17 25 mv i c = 0.2a, i b = 10ma (*) notes: (*) measured under pulsed conditions. pulse width=300 s. duty cycle 2%. 85 120 mv i c = 1a, i b = 10ma (*) 140 180 mv i c = 2a, i b = 20ma (*) 170 250 mv i c = 3a, i b = 40ma (*) 250 340 mv i c = 5a, i b = 100ma (*) base-emitter saturation voltage v be(sat) 880 1000 mv i c = 3a, i b = 40ma (*) base-emitter turn-on voltage v be(on) 840 950 mv i c = 3a, v ce = 2v (*) static forward current transfer ratio h fe 290 440 1200 i c = 10ma, v ce = 2v (*) 270 450 i c = 1a, v ce = 2v (*) 270 360 i c = 3a, v ce = 2v (*) 130 220 i c = 5a, v ce = 2v (*) 40 55 i c = 10a, v ce = 2v (*) transition frequency f t 155 mhz i c = 50ma, v ce = 10v f = 100mhz output capacitance c obo 27 40 pf v cb = 10v, f = 1mhz switching times t on 220 ns i c = 3a, i b = 30ma, v cc = 10v t off 540 ns i c = 3a, i b = 30ma, v cc = 10v
FCX1051A issue 2 - july 2007 4 www.zetex.com ? zetex semiconductors plc 2007 typical characteristics 1m 1m 1m 1m 1m i c - collector current (a) v ce(sat) - (v) v ce(sat) - (v) v be(sat) - (v) h fe - typical gain v be(on) - (v) v ce(sat) v i c 0 ic/ib=50 ic/ib=100 ic/ib=200 +25c -55c +100c 0 i c - collector current (a) h fe v i c 0 i c - collector current (a) v be(on) v i c +100c +150c +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c +25c 0 i c - collector current (a) v be(sat) v i c +25c -55c ic/ib=100 vce=2v -55c ic/ib=100 +25c +150c +100c -55c 10m 100m 1 10 0.2 0.4 0.5 0.3 0.1 10m 100m 1 10 0.1 0.2 0.3 0.4 0.5 10m 100m 1 10 600 150 300 450 750 10m 100m 1 10 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0.4 0.8 1.2 1.6
FCX1051A issue 2 - july 2007 5 www.zetex.com ? zetex semiconductors plc 2007 package outline - sot89 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim millimeters inches dim millimeters inches min max min max min max min max a 1.40 1.60 0.550 0.630 e 2.29 2.60 0.090 0.102 b 0.44 0.56 0.017 0.022 e1 2.13 2.29 0.084 0.090 b1 0.36 0.48 0.014 0.019 e 1.50 bsc 0.059 bsc c 0.35 0.44 0.014 0.017 e1 3.00 bsc 0.118 bsc d 4.40 4.60 0.173 0.181 h 3.94 4.25 0.155 0.167 d1 1.52 1.83 0.064 0.072 l 0.89 1.20 0.035 0.047 d1 d a c b1 l e h e1 b e e1
FCX1051A issue 2 - july 2007 6 www.zetex.com ? zetex semiconductors plc 2007 zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? 2007 published by zetex semiconductors plc definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining th e latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as desi gn ideas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoev er is assumed by zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of th ese circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critic al components in life support devices or systems without the ex press written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devi ce or system whose failure to pe rform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the pr oducts or services concerned. terms and conditions all products are sold subjects to zetex? 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future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice.
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